Infineon IPB200N25N3 G3: 200A, 250V OptiMOS 5 Power MOSFET for High-Performance Switching Applications

In the realm of power electronics, achieving higher efficiency, power density, and reliability is a constant pursuit. The Infineon IPB200N25N3 G3, a member of the advanced OptiMOS™ 5 power MOSFET family, stands out as a premier solution engineered to meet these demanding challenges in high-performance switching applications. This device combines exceptional current handling capability of 200A with a robust 250V voltage rating, making it a cornerstone for designers pushing the boundaries of modern power conversion systems.

A key strength of the IPB200N25N3 G3 lies in its ultra-low figure-of-merit (R DS(on) Q G). With a maximum on-state resistance (R DS(on)) of just 2.0 mΩ at 10 V, it minimizes conduction losses significantly. This is paramount in high-current applications, as it directly translates into reduced heat generation and higher overall system efficiency. Furthermore, the OptiMOS 5 technology ensures superior switching performance, characterized by low gate charge (Q G) and optimized internal capacitances. This allows for faster switching frequencies, which enables the design of smaller, more compact magnetics and filters, thereby increasing power density.

The benefits of this MOSFET extend beyond raw performance metrics. Its enhanced ruggedness and reliability are critical for operation in harsh environments. The device boasts an avalanche-rated design and is qualified for industrial-grade applications, ensuring robust operation under stressful conditions such as overvoltage transients. The use of a TO-Leadless (TOLL) package is another significant advantage. This package offers an excellent power-to-footprint ratio and very low parasitic inductance, which is crucial for managing voltage overshoots and achieving clean switching in high-frequency circuits. The package also features an exposed cooling pad for superior thermal management, allowing heat to be efficiently transferred to a heatsink.

Typical applications that benefit from the IPB200N25N3 G3's capabilities include:

High-current DC-DC converters in server and telecom power supplies.

Motor control and drives for industrial automation and robotics.

Solar inverters and energy storage systems.

Battery management systems (BMS) and protection circuits.

Welding equipment and uninterruptible power supplies (UPS).

ICGOODFIND: The Infineon IPB200N25N3 G3 is a top-tier power MOSFET that sets a high benchmark for performance. Its industry-leading low R DS(on) and excellent switching characteristics make it an ideal choice for engineers focused on maximizing efficiency and power density in demanding 250V applications, from advanced computing to renewable energy infrastructure.

Keywords: OptiMOS 5, Low R DS(on), High-Current Switching, TOLL Package, Power Density