Infineon IPD90N04S4L-04: High-Performance N-Channel MOSFET for Advanced Power Management
The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in modern electronics places immense demands on power management components. At the heart of many advanced systems, from automotive applications to server power supplies and motor control, lies the power MOSFET. The Infineon IPD90N04S4L-04 stands out as a premier N-channel MOSFET engineered to meet these rigorous challenges head-on.
This device is built using Infineon's proprietary OptiMOS™ power technology, a platform renowned for its exceptional performance. The IPD90N04S4L-04 is characterized by its extremely low typical on-state resistance (R DS(on)) of just 1.8 mΩ at a gate-source voltage of 10 V. This ultra-low resistance is a critical factor, as it directly translates to minimized conduction losses. When a MOSFET is in its on-state, power is dissipated as heat according to I²R losses. By drastically reducing R DS(on), this MOSFET operates cooler and more efficiently, which is paramount for improving the overall system efficiency and reducing the need for large heatsinks.
Furthermore, the device boasts an outstanding gate charge (Q G) performance. The switching performance of a MOSFET is heavily influenced by the speed at which its gate can be charged and discharged. A lower gate charge enables faster switching frequencies, which allows designers to shrink the size of associated passive components like inductors and capacitors. This capability is essential for achieving higher power density—packing more power into a smaller physical space. The combination of low R DS(on) and low Q G in the IPD90N04S4L-04 ensures an excellent figure-of-merit (FOM), making it a superior choice for high-frequency switch-mode power supplies (SMPS).
The IPD90N04S4L-04 is rated for a drain-source voltage (V DS) of 40 V and a continuous drain current (I D) of 290 A at 25°C, demonstrating its ability to handle high power levels robustly. Its qualification for automotive applications underscores its high reliability and quality, meeting the stringent standards required for components used in vehicles, where operating conditions can be exceptionally harsh.
Additional features such as a low thermal resistance and an integrated fast body diode enhance its ruggedness and efficiency in synchronous rectification and inductive switching topologies. The MOSFET is also designed to be highly resistant to avalanche breakdown, providing an added layer of durability in demanding environments.
ICGOODFIND: The Infineon IPD90N04S4L-04 is a high-performance N-channel MOSFET that sets a benchmark for efficiency and power density in modern power management. Its exceptional blend of ultra-low on-state resistance, minimized gate charge, and robust construction makes it an ideal solution for demanding applications in automotive, industrial, and computing systems, enabling designers to create smaller, cooler, and more efficient products.
Keywords: OptiMOS™, Low R DS(on), High Power Density, Automotive Grade, Fast Switching.
