Infineon IRFB7537PBF: 200V N-Channel Power MOSFET for High-Efficiency Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom infrastructure to motor drives and renewable energy inverters, lies the Power MOSFET. The Infineon IRFB7537PBF stands out as a robust and highly efficient 200V N-Channel MOSFET engineered specifically to meet these challenges.
This device is built upon Infineon's advanced super-junction technology, a hallmark of their high-performance MOSFETs. This technology enables the IRFB7537PBF to achieve an exceptional balance between low on-state resistance and fast switching capabilities. With a maximum drain-source voltage (Vds) of 200V, it is perfectly suited for operation in circuits like power factor correction (PFC), DC-DC converters, and half-bridge/bridge topologies that are common in off-line switch-mode power supplies.
A key metric for any power MOSFET is its conduction loss, primarily determined by its on-state resistance (Rds(on)). The IRFB7537PBF boasts an impressively low Rds(on) of just 3.7 mΩ (typical at 10V Vgs). This ultra-low resistance directly translates to reduced I²R power losses during operation, leading to cooler running systems, less energy wasted as heat, and ultimately, higher overall efficiency. This is crucial for applications where thermal management is a primary design constraint.
Furthermore, the device is characterized by its low gate charge (Qg) and low effective output capacitance (Coss(eff)). These parameters are critical for switching performance. Lower gate charge means the drive circuit can switch the transistor on and off more quickly and with less energy expended in the process. Similarly, reduced output capacitance minimizes switching losses, especially at higher frequencies. This combination allows designers to push switching frequencies higher, enabling the use of smaller passive components like inductors and transformers, thereby increasing power density.
Housed in a standard TO-220 FullPAK package, the IRFB7537PBF offers a familiar and robust form factor. The FullPAK variant features a fully molded plastic package that provides full isolation between the heatsink and the MOSFET, simplifying assembly and improving safety by eliminating the need for an insulating washer. Its high robustness and reliability make it a trusted choice for industrial-grade applications.
ICGOOODFIND: The Infineon IRFB7537PBF is a high-performance 200V MOSFET that excels in demanding switching applications. Its standout features, including extremely low Rds(on) and optimized switching characteristics thanks to super-junction technology, make it an ideal component for designers aiming to maximize efficiency, reduce heat generation, and achieve higher power density in their systems.
Keywords: Power MOSFET, Super-Junction Technology, Low Rds(on), High-Efficiency Switching, TO-220 FullPAK
