Infineon IAUZ18N10S5L420 100V OptiMOS 5 Power MOSFET: Datasheet and Application Overview

The relentless pursuit of higher efficiency, power density, and reliability in power electronics drives the continuous innovation in semiconductor technology. Infineon Technologies, a leader in this field, addresses these demands with its IAUZ18N10S5L420, a 100V N-channel MOSFET from the benchmark OptiMOS™ 5 technology family. This device is engineered to set new standards in performance for a wide array of switching applications.

Unpacking the Datasheet: Key Performance Parameters

A deep dive into the datasheet reveals the technical merits that make this component a superior choice. The part number itself is descriptive: '100V' denotes a drain-source voltage (VDS) of 100V, making it suitable for applications like 48V bus systems in telecom and server power supplies, industrial motor drives, and battery management systems (BMS) with ample safety margin.

The standout feature is its exceptionally low typical on-state resistance (RDS(on)) of just 1.8 mΩ (max. at VGS = 10 V). This ultralow resistance is the primary contributor to minimizing conduction losses. When combined with outstanding switching performance characterized by low gate and output charges (Qg, Qoss), the device ensures that both static and dynamic power losses are drastically reduced. This synergy is critical for achieving high efficiency, especially at high switching frequencies, which allows for the use of smaller passive components and ultimately leads to more compact and lighter designs.

Housed in an SuperSO8 (SSO-8) package, the IAUZ18N10S5L420 offers an excellent footprint-to-performance ratio. This package features an exposed top-side cooling pad that enables efficient heat dissipation away from the die, directly into the PCB or a heatsink. This superior thermal capability is vital for maintaining device reliability under high-stress operating conditions, allowing it to handle a continuous drain current (ID) of up to 180A.

Application Overview: Where Excellence Meets Practice

The combination of high voltage rating, low RDS(on), and fast switching speed makes the OptiMOS™ 5 IAUZ18N10S5L420 exceptionally versatile.

Server & Telecom Power Supplies (SMPS): It is an ideal candidate for primary-side synchronous rectification and DC-DC converter stages in 48V input voltage systems. Its high efficiency directly contributes to reducing energy loss and meeting stringent 80 PLUS Titanium-like efficiency standards.

Motor Control and Drives: In industrial automation, this MOSFET can be used in inverter stages to drive brushless DC (BLDC) motors. Its robustness and high current handling capability ensure precise and reliable control of motor speed and torque.

Solar Energy Systems: It finds use in maximum power point tracking (MPPT) charge controllers and inverters, where minimizing switching losses is paramount for maximizing the energy harvested from solar panels.

Battery Management Systems (BMS): For high-power applications like energy storage systems (ESS) and electric vehicle (EV) power trains, this MOSFET is perfect for high-current load switching and protection circuits, thanks to its low conduction losses that minimize heat generation.

ICGOOODFIND

The Infineon IAUZ18N10S5L420 exemplifies the pinnacle of power MOSFET design, offering a rare blend of ultra-low resistance, rapid switching, and robust thermal performance in a compact package. It is a top-tier solution for designers aiming to push the boundaries of efficiency and power density in modern 48V-100V power conversion systems.

Keywords:

OptiMOS 5

Low RDS(on)

100V MOSFET

High Efficiency

SuperSO8 Package