High-Efficiency Power Conversion with the Infineon IPP023N10N5 OptiMOS 5 Power MOSFET
The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power semiconductor technology. In applications ranging from server power supplies and telecom infrastructure to industrial motor drives and renewable energy systems, the performance of the power switch is paramount. The Infineon IPP023N10N5, a member of the groundbreaking OptiMOS™ 5 100 V family, stands out as a premier solution engineered to meet these challenges head-on, setting a new benchmark for efficiency and reliability.
At the core of this device's superior performance is its exceptionally low figure-of-merit (R DS(on) Q G). The IPP023N10N5 boasts an ultra-low on-resistance of just 2.3 mΩ maximum at 10 V VGS, coupled with significantly reduced gate charge (QG). This optimal combination is the key to minimizing both conduction and switching losses. Lower conduction losses mean less energy is wasted as heat during the on-state, while reduced switching losses allow for operation at higher frequencies without a punitive efficiency penalty. This enables designers to shrink the size of magnetic components and heat sinks, directly contributing to higher power density and lower system cost.
The benefits of the OptiMOS™ 5 technology extend beyond raw numbers. The device features an integrated Schottky-like body diode that enhances reverse recovery characteristics. This results in softer commutation, reduced electromagnetic interference (EMI), and greater ruggedness in hard-switching topologies like phase-shifted full-bridge or synchronous rectification circuits. Furthermore, the MOSFET offers excellent switching behavior and high dv/dt capability, ensuring stable and predictable performance even in demanding environments.
Packaged in the robust TO-220 package, the IPP023N10N5 provides a proven and reliable mechanical interface, offering a excellent balance of thermal performance and ease of mounting. Its high power handling capability makes it suitable for high-current paths in power conversion stages. Whether deployed as a primary switch in a DC-DC converter or as a synchronous rectifier in an AC-DC power supply, this MOSFET consistently delivers the efficiency gains necessary to meet stringent global energy regulations like 80 PLUS Titanium for server PSUs.
ICGOOODFIND: The Infineon IPP023N10N5 OptiMOS™ 5 Power MOSFET is a high-performance component that dramatically enhances power conversion efficiency through its best-in-class low on-resistance and gate charge. It is an ideal choice for designers aiming to achieve maximized power density, reduced losses, and superior system reliability in a wide array of high-power applications.
Keywords: Power Efficiency, OptiMOS™ 5, Low RDS(on), Switching Losses, Power Density
