Infineon IPB160N04S4L-H1 OptiMOS 5 Power MOSFET for High-Efficiency, High-Density Power Conversion Applications

The relentless drive towards more compact and energy-efficient electronic systems places increasing demands on power conversion components. In this landscape, the Infineon IPB160N04S4L-H1, a member of the advanced OptiMOS™ 5 40 V power MOSFET family, stands out as a pivotal solution engineered to meet the challenges of modern power design.

This MOSFET is engineered around a superior trench technology that significantly minimizes key figures of merit. Its exceptionally low on-state resistance (RDS(on)) of just 1.6 mΩ (max. at VGS = 10 V) is a cornerstone of its performance. This ultra-low resistance directly translates to minimized conduction losses, allowing for more current to be handled with less energy wasted as heat. This is paramount for boosting the overall efficiency of power conversion stages, whether in switching power supplies, motor drives, or synchronous rectification circuits.

Furthermore, the device boasts an outstanding gate charge (QGate) and a low figure-of-merit (FOM, RDS(on) x QGate). This optimized switching performance ensures rapid turn-on and turn-off transitions, which drastically reduces switching losses—a critical factor in high-frequency operation. The ability to operate efficiently at higher frequencies enables designers to shrink the size of passive components like inductors and capacitors, a key step towards achieving higher power density in end applications.

Housed in a robust SuperSO8 (SSO-8) package, the IPB160N04S4L-H1 offers an excellent power-to-size ratio. This package features a low parasitic inductance and an efficient cooling capability, which is essential for maintaining device reliability under high-stress conditions. Its compatibility with automated PCB assembly processes further simplifies manufacturing.

Target applications are diverse and demanding, including:

High-Current DC-DC Converters in server, telecom, and computing infrastructure.

Synchronous Rectification in switched-mode power supplies (SMPS).

Motor Control and Drives for industrial automation and robotics.

Battery Management Systems (BMS) and protection circuits.

ICGOOFind: The Infineon IPB160N04S4L-H1 OptiMOS™ 5 MOSFET is a top-tier component for designers prioritizing peak efficiency and power density. By masterfully balancing ultra-low RDS(on) with superior switching characteristics, it directly addresses the core challenges of power loss and thermal management, enabling the next generation of smaller, cooler, and more efficient power solutions.

Keywords: OptiMOS 5, Low RDS(on), High-Efficiency, Power Density, SuperSO8