Infineon IPW80R280P7: The High-Performance 800V CoolMOS™ P7 Power Transistor

In the relentless pursuit of higher efficiency and power density in modern electronic systems, the choice of power switching device is paramount. The Infineon IPW80R280P7 stands out as a benchmark in this domain, representing the pinnacle of high-voltage MOSFET technology. As part of Infineon's esteemed CoolMOS™ P7 family, this 800V superjunction MOSFET is engineered to deliver exceptional performance in a wide array of demanding applications.

The core of the IPW80R280P7's superiority lies in its revolutionary superjunction (SJ) technology. This design fundamentally minimizes on-state resistance (RDS(on)) while simultaneously reducing gate and output charges. The result is a device that offers an outstandingly low figure-of-merit (RDS(on) x Qg), which directly translates into significantly lower switching and conduction losses. For designers, this means systems can operate at higher frequencies with improved thermal performance, enabling the development of smaller, lighter, and more efficient power supplies.

A key specification that highlights its efficiency is its ultra-low on-resistance of just 280 mΩ at 800V. This remarkably low RDS(on) ensures that power losses during the conduction phase are kept to an absolute minimum, which is critical for enhancing the overall efficiency of the system. Furthermore, the transistor boasts excellent switching behavior and high ruggedness, providing superior reliability under harsh operating conditions, including overvoltage and overcurrent events.

The versatility of the IPW80R280P7 makes it an ideal candidate for a multitude of high-performance applications. It is particularly well-suited for:

Server & Telecom SMPS: Where high efficiency is critical for reducing operational costs and cooling requirements.

Industrial Power Supplies: Demanding robustness and reliability in challenging environments.

Power Factor Correction (PFC) stages: Essential for complying with stringent energy efficiency regulations.

Lighting Solutions: Including high-end LED drivers that require efficient and stable power delivery.

Solar Inverters and EV Charging Infrastructure: Where high voltage and efficiency are non-negotiable.

By integrating the IPW80R280P7, engineers can push the boundaries of their designs, achieving new levels of performance that were previously unattainable with conventional MOSFETs.

ICGOOODFIND: The Infineon IPW80R280P7 is a top-tier 800V power MOSFET that sets a new standard for efficiency and power density. Its industry-leading low RDS(on) and optimized switching characteristics make it an indispensable component for designers aiming to create the next generation of high-efficiency, compact, and reliable power electronics systems across industrial, computing, and green energy sectors.

Keywords: CoolMOS™ P7, High Efficiency, 800V MOSFET, Low RDS(on), Superjunction Technology.