Infineon BSC340N08NS3G: High-Performance N-Channel MOSFET for Power Management Applications

The Infineon BSC340N08NS3G is an advanced N-channel MOSFET engineered to meet the rigorous demands of modern power management systems. Utilizing Infineon’s innovative OptiMOS™ 5 technology, this power MOSFET sets a high standard in efficiency, thermal performance, and reliability, making it particularly suitable for applications such as DC-DC converters, motor control, and switched-mode power supplies (SMPS).

A key feature of the BSC340N08NS3G is its exceptionally low on-state resistance (RDS(on)) of just 3.4 mΩ at 10 V. This ultra-low resistance minimizes conduction losses, enabling higher energy efficiency and reduced heat generation. Combined with a compact SuperSO8 package, the device offers superior power density, making it ideal for space-constrained applications where thermal management is critical.

The MOSFET is designed with a low gate charge (QG) and optimized switching characteristics, which significantly reduce switching losses at high frequencies. This allows designers to increase switching frequencies without compromising efficiency, leading to smaller passive components and more compact power supply designs.

With a drain-source voltage (VDS) rating of 80 V and continuous drain current (ID) capability of up to 34 A, the BSC340N08NS3G provides robust performance in a variety of industrial and automotive environments. Its strong avalanche ruggedness and high temperature operation further enhance system durability.

In summary, the Infineon BSC340N08NS3G stands out as a high-performance power MOSFET that addresses the growing need for energy-efficient and thermally stable solutions in power electronics.

ICGOOODFIND

The BSC340N08NS3G from Infineon exemplifies state-of-the-art MOSFET technology, offering superior efficiency, thermal performance, and power density for next-generation power management applications.

Keywords:

Power MOSFET, OptiMOS™ 5, Low RDS(on), High Efficiency, Thermal Performance